发明名称 |
PLASMA CVD APPARATUS, PLASMA CVD METHOD AND THIN FILM SOLAR CELL |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a plasma CVD apparatus in which deposition rate can be enhanced when a film is deposited on a substrate. SOLUTION: The plasma CVD system for forming a film on a substrate 13 carried into a film deposition chamber 4-6 comprises a holder 14 being driven to carry the substrate while holding, pipes 23 and 24 for supplying a material gas to the film deposition chamber, a high frequency electrode 21 disposed in the film deposition chamber and conducted while facing the substrate to generate plasma in the film deposition chamber, and upper and lower earth members 61 and 62 for earthing the holder by touching it under a state where at least the substrate faces the electrode.</p> |
申请公布号 |
JP2002270600(A) |
申请公布日期 |
2002.09.20 |
申请号 |
JP20010072971 |
申请日期 |
2001.03.14 |
申请人 |
KANEGAFUCHI CHEM IND CO LTD |
发明人 |
KURIBE YOSHIFUMI |
分类号 |
C23C16/509;H01L21/31;H01L31/04;(IPC1-7):H01L21/31 |
主分类号 |
C23C16/509 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|