发明名称 MASK, MANUFACTURING METHOD THEREOF AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
摘要 <p>PROBLEM TO BE SOLVED: To provide a mask, a manufacturing method thereof and a semiconductor device manufacturing method which raises the efficiency of the mask manufacturing and improves the machining precision of patterns. SOLUTION: The mask manufacturing method comprises a step of laminating a sacrificial film 112 and a conductive layer 108 on a substrate 111, a step of forming a metal film 102 having apertures 107 by electroplating and electrolytic polishing with a resist 113 used for a mold, a step of forming a metal film support (strut) 104 by electroplating and electrolytic polishing with a resist 114 used for a mold, a step of removing the resists 114, 113, a step of removing the conductive layer 108 on at least the apertures 107, and a step of removing the sacrificial film 112 to separate the substrate 111. The mask is thus manufactured and a semiconductor device is manufactured, using the same.</p>
申请公布号 JP2002270496(A) 申请公布日期 2002.09.20
申请号 JP20010071843 申请日期 2001.03.14
申请人 SONY CORP 发明人 MORIYA SHIGERU
分类号 G03F1/20;G03F1/22;G03F1/24;H01L21/027;(IPC1-7):H01L21/027;G03F1/16 主分类号 G03F1/20
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