| 摘要 |
PROBLEM TO BE SOLVED: To provide a technique by which the lower electrode of a capacitance element can be formed with satisfactory reproducibility. SOLUTION: A ruthenium film 39 and a photosensitive film 40 are etched back at nearly the same rate in an ozone atmosphere at a treatment temperature of about 150 deg.C. The photosensitive film 40 and the ruthenium film 39 at the outside of a groove 38 are removed. Then, the photosensitive film 40 in the inside of the groove 38 is removed, and a lower electrode, in a desired shape and made of the ruthenium film 39, is formed in the inside of the groove 38. |
