| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide new slurry for polishing that has one's own oxidation force in a polishing abrasive, and has polishing characteristics also to Cu. SOLUTION: The slurry for polishing should contain a spinel type manganese oxide that includes a different kind of metal M in an 8A site and is shown by a general expression M1- XMn2 O4 (0<X<=1). The slurry for polishing should extract the different kind of metal M of the 8A site by acid treatment, and be mentioned in claims 1 to 3. The slurry for polishing should have a pH of 3.0 or less and 0.1 or more, and be mentioned in claims 1 to 4. Additionally, the slurry for polishing should be used for polishing the wiring material of a semiconductor integrated circuit for flattening, and be mentioned in the claims 1 to 5.</p> |
