发明名称 SURFACE EMISSION SEMICONDUCTOR LASER AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a surface emission semiconductor laser having desired element characteristics and its manufacturing method. SOLUTION: The surface emission semiconductor laser 100 has a resonator 120 formed on a semiconductor substrate 140 and emits light in the direction perpendicular to the semiconductor substrate 140. The surface emission semiconductor laser 100 comprises a columnar part 110 constituting a part of the resonator 120, and an insulation layer 160 filling the columnar part 110. The insulation layer 160 is composed of an inorganic compound.
申请公布号 JP2002270958(A) 申请公布日期 2002.09.20
申请号 JP20010063102 申请日期 2001.03.07
申请人 SEIKO EPSON CORP 发明人 NISHIDA TETSURO
分类号 H01S5/183;(IPC1-7):H01S5/183 主分类号 H01S5/183
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