发明名称 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To prevent degradation of characteristics due to absorption of moisture by a highly hygroscopic porous low-permittivity insulating material. SOLUTION: A sample 2 containing a low-permittivity insulating material is placed in a decompression chamber 1, and irradiated with a microwave by using a magnetron 7 under exhaustion and decompression to dry the material 2. This drying process is performed immediately before the drying process in CVD, sputtering, etc.
申请公布号 JP2002270570(A) 申请公布日期 2002.09.20
申请号 JP20010062817 申请日期 2001.03.07
申请人 HITACHI LTD 发明人 KOTO NAOYUKI;HONMA YOSHIO
分类号 H01L21/3205;H01L21/304;H01L21/316;H01L23/52;(IPC1-7):H01L21/304;H01L21/320 主分类号 H01L21/3205
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