| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide slurry for polishing where polishing characteristics corresponding to the degree of Mn oxidation manifest themselves by controlling the degree of Mn oxidation in polishing agent. SOLUTION: The Mn 508 having an average particle diameter (D 50) of 1μm is set to 1 wt.% slurry by ultra pure water, potassium hydroxide where a guaranteed reagent is diluted, and sulphuric acid are dropped for adjusting to arbitrary slurry where the pH of the slurry is 12.0 to 0.5. Then, the 15 mm- square dicing product of a wafer that is plated with Cu is used as a sample, is fitted onto a work plate 1, and is inserted into a correction ring 2. The adjusted slurry is supplied from a slurry supply nozzle 4 at a dropping speed of 20 ml/min, and at the same time is polished by setting the rotational speed of a surface plate 3 to 30 rpm.</p> |
