| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a laser element in which a resonance face is formed in a nitride semiconductor grown on a sapphire substrate difficult to cleave and a laser beam having an elliptical far field pattern is obtained. SOLUTION: The method for manufacturing a laser element comprises a first step for growing a nitride semiconductor layer on a sapphire substrate and forming an n-type layer, an active layer and a p-type layer thereon such that the nitride semiconductor layer has a total film thickness of 6μm or above and then exposing the surface of the n-type layer by etching to make a resonance face, and a second step for dividing the sapphire substrate by setting a dividing position, between the opposite resonance faces formed continuously by etching and between the resonance faces of one and the other laser elements, closely to one resonance face such that a part including the substrate projecting from the resonance face does not intercept laser light emitted from the resonance face.
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