| 摘要 |
PROBLEM TO BE SOLVED: To provide an infrared sensor which is largely improved in performance. SOLUTION: An infrared sensor is equipped with a semiconductor substrate 1, a diaphragm 2 low in thermal conductivity and formed on the semiconductor substrate 1, a thermopile 4 which comprises thermocouples 13 that are arranged in a plurality of sours and parallel with each other on the diaphragm 2, electrically connected each other in series, and each composed of P-type polysilicon 10 and N-type polysilicon 11 which are of continuous length and provided with contacts 10a and 10b that are wider than them and located at both their ends respectively, and a heat sink layer 5 formed on the sensing part of the thermopile 4 via an insulating layer 3, where the contacts 10a and 11a are alternately arranged in zigzag in the lengthwise direction so as to narrow a space P between the P-type polysilicon 10 and N-type polysilicon 11.
|
