发明名称 SYSTEM AND METHOD FOR PRODUCING SEMICONDUCTOR
摘要 PROBLEM TO BE SOLVED: To provide a system and a method for producing a semiconductor in which the treating characteristics can be controlled in response to variation. SOLUTION: According to a relation correlating the monitor results and the wafer temperature, a monitor value under treatment is compared with a past monitor value for successful treatment and temperature of the wafer 1 is controlled to minimize the shift of the monitor values. Variation in the treating characteristics can thereby be monitored and the treating characteristics can be controlled in response to variation.
申请公布号 JP2002270579(A) 申请公布日期 2002.09.20
申请号 JP20010063607 申请日期 2001.03.07
申请人 HITACHI LTD 发明人 KITSUNAI HIROYUKI;TANAKA JUNICHI;SUGANO SEIICHIRO;YAMAMOTO HIDEYUKI
分类号 C23C16/52;H01L21/205;H01L21/302;H01L21/3065;(IPC1-7):H01L21/306 主分类号 C23C16/52
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