发明名称 METHOD OF FORMING COATING FILM, SEMICONDUCTOR DEVICE MANUFACTURED THEREBY, AND COATING-FILM FORMING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a method of forming a coating film, with which an inorganic-material coating film can be formed at low cost by making the film- quality adjustment possible simultaneously with deposition without requiring high-temperature annealing process for film-quality adjustment after the deposition, and to provide an apparatus therefor. SOLUTION: An inorganic-material coating film is formed on the surface of a member 5 to be processed by heating a deposition material liquid. The apparatus for forming the coating film comprises a stage 15 on which the member 5 is loaded in an operation chamber 10, a deposition material-liquid supply means 22 that supplies the deposition material liquid into the operation chamber 10, a reaction-gas supply means 24 that supplies reaction gas into the operation chamber 10, an irradiating means 30 that irradiates the reaction gas supplied into the operation chamber 10 with an electron beam, and a heating means 17 that heats the member.
申请公布号 JP2002270539(A) 申请公布日期 2002.09.20
申请号 JP20010064867 申请日期 2001.03.08
申请人 SEIKO EPSON CORP 发明人 SATO MITSURU;MORI YOSHIAKI
分类号 H01L21/285;H01L21/28;H01L21/31;H01L21/316;H01L21/768;(IPC1-7):H01L21/285 主分类号 H01L21/285
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