| 摘要 |
PROBLEM TO BE SOLVED: To provide a low-dimensional plasmon light-emitting device for converting the energy of an injected current into light energy ranging wide over far-infrared to ultraviolet regions. SOLUTION: The low-dimensional plasmon light-emitting device comprises a low- dimensional conduction structure formed in or on the surface of a semiconductor or a dielectric, and a periodical microstructure, having a period of a real space period D1 =2π/q1 of a wave number q1 for imparting a specific light emitting energy (h/2π)ω1 in a wave number-energy curve of the low-dimensional plasmon and formed extremely near or in the low-dimensional conduction structure. The low-dimensional conduction structure includes a quantum well structure, formed in the semiconductor or the dielectric, a space charge layer formed on the surface or a hetero-interface of the semiconductor or the dielectric, a surface electron band or an interface electron band of a high carrier density formed on the surface or the hetero-interface of the semiconductor or the dielectric or the like. The periodic microstructure includes a periodic structure formed of metal fine wirings or by etching, a periodical structure of a thin film grown on a periodic step surface of an atomic level, an epitaxial or polymerization thin film of an organic molecule or a macromolecule for capturing a periodical structure therein or the like. |
