METHOD OF FORMING GATE ELECTRODE

摘要

PROBLEM TO BE SOLVED: To avoid formation of residues on a semiconductor substrate in forming a gate electrode by dry etching. SOLUTION: An anti-reflection film 13, which is mainly composed of an organic material and does not substantially contain any sulfur component, is formed on a polysilicon film 12 formed on a silicon oxide film 11 on a semiconductor substrate 10. After a resist pattern 14 is formed on the anti-reflection film 13, the patterned anti-reflection film 13 is dry-etched using the resist pattern 14 for the mask to form a patterned anti-reflection film 13A. The polysilicon film 12 is dry-etched using the resist pattern 14 and the patterned anti-reflection film 13A for the mask to form a gate electrode 12A composed of the polysilicon film 12.