MANUFACTURING METHOD FOR LARGE-GRAIN POLYCRYSTALLINE FILM

摘要

PROBLEM TO BE SOLVED: To provide a large-grain polycrystalline film manufacturing method which suppresses any abnormal separation of a polycrystalline film silicon from a substrate to reduce the damage caused to both. SOLUTION: The large-grain polycrystalline film manufacturing method comprises a first step of forming a first insulation film, a first semiconductor film and a second insulation film in this order on a substrate; a second step of melt-recrystallizing the first semiconductor film covered with the second insulation film; a third step of removing the second insulation film to expose the first semiconductor film melt-recrystallized to enlarge the grain size; a fourth step of epitaxially growing a second semiconductor film on the exposed first semiconductor film; and a fifth step of forming through-holes into the second and first semiconductor films, and etching off the first insulation film to separate the second and first semiconductor films from the substrate. The substrate uses a single crystal silicon of an orientation plane (111).