| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a semiconductor light emitting device in which a crystal defect can be suppressed by relaxing strain caused by different physical properties even if semiconductor layers having different physical properties, e.g. a coefficient of thermal expansion or the like, are laid in layer. SOLUTION: The semiconductor device has a first semiconductor region, e.g. a substrate 10, and a second semiconductor region of a multilayer semiconductor ST comprising a strain relaxing film 11 provided at a one region on the first semiconductor region substrate, an at least a first clad layer of a first conductivity type, a first active layer 14 and a second clad layer of a second conductivity type provided on the first semiconductor region provided with no strain relaxing film 11 and on the strain relaxing film 11 and having specified physical properties, e.g. a coefficient of thermal expansion, different from those of the first semiconductor region. Strain caused by the different physical properties between the first and second semiconductor regions can be relaxed by the strain relaxing film 11.
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