| 摘要 |
PROBLEM TO BE SOLVED: To provide a heterojunction bipolar transistor which can obtain high current gain, while maintaining a high operation frequency, and its manufactur ing method. SOLUTION: This heterojunction bipolar transistor (100) is a heterojunction bipolar transistor (100), containing a collector (104), an emitter (114) and a base (110), positioned between the collector (104) and the emitter (114), and the base (110) contains a gallium arsenide antimony (GaAsSb) layer having a thickness of less than 49 nm.
|
