| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, in which an insulating film formed on a capacitor is planarized and to provide a method of manufacturing the device. SOLUTION: This semiconductor device is provided with a Cu diffusion preventing film 15 formed on the entire plane, the insulation film 16 formed on the film 15 and having an opening 18, the capacitor 24 selectively formed on the Cu diffusion preventing film 15 in the opening 18. This device is also provided with a first interlayer film 25, formed in the opening 18 and a second interlayer film 25 formed on the film 25. The insulating film 16 and second interlayer film 25 have low dielectric constants, and the first interlayer film 25 has a high dielectric constant.
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