| 摘要 |
PROBLEM TO BE SOLVED: To miniaturize an MOS field effect transistor, without deteriorating the breakdown voltage of it. SOLUTION: The electric field relieving layer of gate overlapping structure is arranged by bringing it into contact with a drain region, a distance between the electric field relieving layer and a high concentration layer is spread and an electric field is relieved. Since an equal potential line is bent by a gate insulating film, the electric field is relieved much more. A punch-through stopper layer of a gate overlap structure is arranged by bringing it into contact with the source region, the spreading of a depletion layer to the source region is suppressed, and gate length made fine.
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