| 摘要 |
An interband cascade (IC) light emitting device having narrow ridges, and a method of growing and fabricating the IC light emitting device is disclosed. The IC light emitting device produced by the method of the present invention has 18 active regions separated by n-type injection regions and a plurality of coupled quantum wells of Al(In)Sb, InAs, and Ga(In)Sb layers. The IC light emitting device produced according to the present method has a differential external quantum efficiency of at least 500%, a peak power output of at least 4W/facet, a power conversion efficiency of at least 14% in continuous wave at 80K, a power conversion efficiency of at least 18% in pulsed wave operation at 80K, a continuous wave operation temperature of 142 K or less, a thermal resistance of from about 24-29 K*cm2/kW and continuous wave output powers of at least 100 mW/facet at temperatures above 77K.
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