发明名称 |
Method for manufacturing a semiconductor film |
摘要 |
A method for manufacturing a semiconductor film includes a step of preparing a first member including a semiconductor substrate, a semiconductor layer, and a separation layer provided between the semiconductor substrate and the semiconductor layer, a step of bonding or attracting a second member which is hardly heated by induction heating, onto the semiconductor layer of the first member, and a step of separating the semiconductor layer from the semiconductor substrate at the separation layer by heating the semiconductor substrate by induction heating.
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申请公布号 |
US2002132449(A1) |
申请公布日期 |
2002.09.19 |
申请号 |
US20020083585 |
申请日期 |
2002.02.27 |
申请人 |
IWASAKI YUKIKO;SHOJI TATSUMI;NISHIDA SHOJI |
发明人 |
IWASAKI YUKIKO;SHOJI TATSUMI;NISHIDA SHOJI |
分类号 |
H01L31/04;H01L21/02;H01L21/268;H01L21/30;H01L21/46;H01L21/762;H01L27/12;(IPC1-7):H01L21/30 |
主分类号 |
H01L31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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