发明名称 |
METHOD AND APPARATUS FOR THE FABRICATION OF FERROELECTRIC FILMS |
摘要 |
The present invention is related to methods and apparatus for processing weak ferroelectric films on semiconductor substrates, including relatively large substrates, e.g., with 300 millimeter diameter. A ferroelectric film of zinc oxide (ZnO) doped with lithium (Li) and/or magnesium (Mg) is deposited on a substrate in a plasma assisted chemical vapor deposition process such as an electron cyclotron resonance chemical vapor deposition (ECR CVD) process. Zinc is introduced to a chamber through a zinc precursor in a vaporizer. Microwave energy ionizes zinc and oxygen in the chamber to a plasma, which is directed to the substrate with a relatively strong field. Electrically biased control grids control a rate of deposition of the plasma. The control grids also provide Li and/or Mg dopants for the ZnO to create the ferroelectric film. A desired ferroelectric property of the ferroelectric film can be tailored by selecting an appropriate composition of the control grids.
|
申请公布号 |
US2002130032(A1) |
申请公布日期 |
2002.09.19 |
申请号 |
US20010810368 |
申请日期 |
2001.03.15 |
申请人 |
AHN KIE Y.;FORBES LEONARD |
发明人 |
AHN KIE Y.;FORBES LEONARD |
分类号 |
C23C16/40;C23C16/511;H01J37/32;(IPC1-7):C23C14/32;C23C14/00 |
主分类号 |
C23C16/40 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|