| 摘要 |
First of all, a semiconductor substrate is provided. Then a gate oxide layer having an uniform thickness is formed on the semiconductor substrate by way of using thermal oxidation. Subsequently, a doping layer is formed on the gate oxide layer by a plasma doped process. Next, forming a poly-layer on the doping layer of the gate oxide layer, wherein the poly-layer has an ions-distribution. Afterward, defining the poly-layer to form a poly-gate. The P-type ions are then implanted into the poly-gate and the substrate by way of using a self-aligned process. Finally, performing a thermal annealing process to form a uniform ion-implanting region and a poly-gate having a lower contact-resistance.
|
