| 发明名称 |
System and method for developing a photoresist layer with reduced pattern collapse |
| 摘要 |
A method of developing a photoresist layer on a semiconductor wafer in a developing chamber includes applying a developer to the photoresist layer, applying an alcohol rinse to the photoresist layer, and drying the wafer.
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| 申请公布号 |
US2002132184(A1) |
申请公布日期 |
2002.09.19 |
| 申请号 |
US20020083873 |
申请日期 |
2002.02.27 |
| 申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
BABCOCK CARL P. |
| 分类号 |
G03F7/32;B05D7/00;G03F7/30;G03F7/38;H01L21/027;H01L21/311;(IPC1-7):G03C1/492;G03C1/494 |
主分类号 |
G03F7/32 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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