发明名称 |
PHOTOMASK FRAME MODIFICATION TO ELIMINATE PROCESS INDUCED CRITICAL DIMENSION CONTROL VARIATION |
摘要 |
An apparatus comprising a mask having an active device area and a moat. The moat substantially surrounds the mask active device area and has a width greater than a plasma specie diffusional length. A method comprising depositing a layer of resist on a mask substrate having transparent and opaque layers; and exposing the resist layer to radiation. The radiation is patterned to produce features within an active device area. The radiation is also patterned to produce a moat substantially surrounding the active device area having a width greater than a plasma specie diffusional length.
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申请公布号 |
US2002132170(A1) |
申请公布日期 |
2002.09.19 |
申请号 |
US19990411729 |
申请日期 |
1999.10.01 |
申请人 |
TSAI WILMAN;KAMANA MARILYN;CHEN FREDERICK;FARNSWORTH JEFF |
发明人 |
TSAI WILMAN;KAMANA MARILYN;CHEN FREDERICK;FARNSWORTH JEFF |
分类号 |
G03F1/14;(IPC1-7):G03F9/00 |
主分类号 |
G03F1/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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