发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
According to a semiconductor device and a method of manufacturing the same, a trade-off relationship between threshold values and a diffusion layer leak is eliminated and it is not necessary to form gate oxide films at more than one stages. Since impurity dose are different from each other between gate electrodes (4A to 4C) of N-channel type MOS transistors (T41 to T43), impurity concentration in the gate electrodes (4A to 4C) are different from each other. The impurity concentration in the gate electrodes are progressively lower in the order of higher threshold values which are expected.
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申请公布号 |
US2002130374(A1) |
申请公布日期 |
2002.09.19 |
申请号 |
US19990366732 |
申请日期 |
1999.08.04 |
申请人 |
UENO SHUICHI;OKUMURA YOSHINORI;MAEDA SHIGENOBU;MAEGAWA SHIGETO |
发明人 |
UENO SHUICHI;OKUMURA YOSHINORI;MAEDA SHIGENOBU;MAEGAWA SHIGETO |
分类号 |
H01L21/8234;H01L21/8242;H01L21/8247;H01L27/088;H01L27/10;H01L27/105;H01L27/108;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L21/823;H01L29/94;H01L31/062;H01L21/336 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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