| 摘要 |
<p>A sputtering target formed with an electric discharge machining trace on a surface on which unnecessary film during sputtering is deposited, a backing plate or an apparatus in a sputtering device, the electric discharge machining trace consisting of many inclined protrusions each having an angle of depression of less than 90°. A required, chemical etching is performed on the electric discharge machined portions. Therefore, separation/scattering of deposits, occurring from the unnecessary-film-deposited surfaces of a target, a backing plate and an apparatus in a sputtering device, is prevented.</p> |
