| 摘要 |
A method and system produce alternating phase shift masks multiple phase shift mask resolution levels for multiple feature classes. The method comprises: processing a pattern for a photolithographic mask that defines a layer, wherein said pattern defines features in first and second feature classes in the layer; defining first layout dimensions for phase shift window pairs for a first feature resolution level, and second layout dimensions for phase shift window pairs for a second feature resolution level; laying out a plurality of phase shift window pairs, including using said first layout dimensions for phase shift window pairs for the first feature class, and using said second layout dimensions for phase shift window pairs for the second feature class; and assigning first and second phase shift values to phase shift windows in the plurality of phase shift window pairs. The process results in the production of set of masks for defining a layer of material in an integrated circuit or other work piece. The set of masks comprises a first mask having a plurality of phase shifting window pairs in an opaque field for defining respective phase shift window defined structures in the layer. The first mask has a plurality of phase shifting windows in an opaque field for defining respective phase-shift window defined structures in said layer. The phase shift windows in said plurality comprise respective first and second classes of windows, the first class having a width dimension based upon a first layout width, and the second class having a width dimension based on a second layout width, said layout width being greater than said second layout width.
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