发明名称 REFERENCE FOR MRAM CELL
摘要 A reference circuit (132) for an MRAM array, including logic "1" reference MRAM cells (MR1a) and (MR1b) coupled in parallel with logic "0" reference MRAM cells (MR0a) and (MR0b). The reference current (Iref) is coupled to a measurement resistor (Rm4)of a sense amplifier (130) which is adapted to determine the logic state of an unknown memory cell MCu.
申请公布号 WO02073620(A2) 申请公布日期 2002.09.19
申请号 WO2002US03040 申请日期 2002.01.24
申请人 INFINEON TECHNOLOGIES NORTH AMERICA CORP. 发明人 HOENIGSCHMID, HEINZ
分类号 G11C11/15;H01L21/8246;H01L27/10;H01L27/105 主分类号 G11C11/15
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