发明名称 Method for joining and an ultra-high density interconnect
摘要 Embodiments of the invention are directed to a method comprising depositing a dielectric layer on a circuitized layer having a conductive region. The dielectric layer is preferably a bonding sheet. An aperture is formed in the dielectric layer over the conductive region. A conductive body, disposed on another circuitized substrate, is inserted into the aperture. The conductive body comprises a main region (e.g., a conductive post) and a depletion region (e.g., a thin layer of metal or transient liquid alloy bonding material). The depletion region contacts the conductive region on the circuitized layer, and the circuitized layers are laminated together. Heat and pressure can be applied to the combination in order to form an intermetallic region from the depletion region.
申请公布号 US2002129894(A1) 申请公布日期 2002.09.19
申请号 US20010962783 申请日期 2001.09.24
申请人 LIU KUO-CHUAN;LEE MICHAEL G. 发明人 LIU KUO-CHUAN;LEE MICHAEL G.
分类号 H01L21/60;B32B7/12;H01L21/58;H01L21/68;H05K3/34;H05K3/46;(IPC1-7):B32B7/14 主分类号 H01L21/60
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