发明名称 |
Semiconductor device and method of fabricating the same |
摘要 |
A semiconductor device has a semiconductor substrate, a first transistor having a first gate electrode formed of a polycrystalline silicon germanium film as formed above said semiconductor substrate, and a second transistor having a second gate electrode which is formed of a polycrystalline silicon germanium film as formed above the semiconductor substrate and which is different in concentration of germanium from the first gate electrode.
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申请公布号 |
US2002130393(A1) |
申请公布日期 |
2002.09.19 |
申请号 |
US20020082257 |
申请日期 |
2002.02.26 |
申请人 |
TAKAYANAGI MARIKO;FUKUI HIRONOBU |
发明人 |
TAKAYANAGI MARIKO;FUKUI HIRONOBU |
分类号 |
H01L21/28;H01L21/336;H01L21/8238;H01L27/092;H01L29/423;H01L29/43;H01L29/49;H01L29/78;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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