| 摘要 |
<p>A process chamber (110) capable of processing a substrate (50) in a plasma comprises a dielectric (210) covering a first electrode (220) and a second electrode (230), a conductor (250) supporting the dielectric (210), and a voltage supply (170) to supply an RF voltage to the first electrode (220) or the second electrode (230) in the dielectric (210). The first electrode (220) capacitively couples with a process electrode (225) to energize process gas in the process chamber (110) and RF voltage applied to the second electrode (230) is capacitively coupled to the conductor (250) and through a collar (260) or the second electrode (230) is directly capacitively coupled through the collar (260).</p> |
