Semiconductor integrated circuit device with reduced cross-talk and method for fabricating same

摘要

The present invention provides a semiconductor integrated circuit device comprising a digital circuit and an analog circuit on a common substrate wherein a substrate effect constant of the analog circuit is at least less than a substrate effect constant of the digital circuit and wherein the analog circuit further comprises a P type polysilicon gate electrode for a nMOSFET and a N type polysilicon gate electrode for a pMOSFET.