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发明名称
DRAM-Speicherzelle mit vertikalem Transistor und Verfahren zur Herstellung derselben
摘要
申请公布号
DE59609550(D1)
申请公布日期
2002.09.19
申请号
DE19965009550
申请日期
1996.05.10
申请人
INFINEON TECHNOLOGIES AG
发明人
ROESNER, DR.;RISCH, DR.;HOFMANN, DR.;KRAUTSCHNEIDER, DR.
分类号
H01L21/8242;H01L27/108;(IPC1-7):H01L27/108;H01L21/824
主分类号
H01L21/8242
代理机构
代理人
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