发明名称 |
Method for forming metal plug |
摘要 |
Disclosed is a method of forming a metal plug which selectively forms the metal plug within a contact hole or a via hole in a simple manner. The method of the invention comprises the following steps of: (a) forming an insulation film having a contact hole on a lower structure, the contact hole exposing the lower structure; (b) forming a diffusion barrier with a uniform thickness on the whole surface of the resultant structure of the (a) step; (c) exposing the resultant structure having the diffusion barrier to an oxygen plasma atmosphere or an ozone plasma atmosphere to form a nucleation-preventing film made of an oxide on the surface of the diffusion barrier outside the contact hole; and (d) depositing a metal only inside the contact hole via a CVD to form the metal plug. According to the present invention, the manufacturing yield is improved whereas the manufacturing cost thereof is saved.
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申请公布号 |
US2002132472(A1) |
申请公布日期 |
2002.09.19 |
申请号 |
US20020098947 |
申请日期 |
2002.03.14 |
申请人 |
JUSUNG ENGINEERING CO., LTD. |
发明人 |
PARK CHANG SOO |
分类号 |
H01L21/768;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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