| 摘要 |
The invention relates to a thyristor configuration comprising a first connection (1), which is configured as a first region of a first conductivity type. A second region (2) of a second conductivity type adjoins the first region (1). A third region (3) of the first conductivity type, which borders the second region (2), has a common surface with the latter. A second connection (4), configured as a fourth region of the second conductivity type, adjoins the third region. An auxiliary electrode (6, 7) is located on the common surface of the second region (2) and the third region (3), said electrode bordering at least one of the two regions. |
