| 摘要 |
<p>A crucible susceptor (15) for a crystal growing process for pulling a crystal ingot from a crystal material melt in a crucible, comprises at least one high purity composite component containing a carbon fiber reinforced carbon matrix (15a), said at least one high purity composite component having at least a total level of metal impurity less than about 10 parts per million; and at least one high purity graphite component (15c), said at least one high graphite component having a total level of metal impurity less than about 10 parts per million. A single crystal growing process for pulling a single crystal ingot (17) from a crystal material melt includes providing a crystal material melt in a crucible and intimately supporting the crucible (14) with the crucible susceptor of the present invention. The crucible susceptor disclosed may be used in a Czochralski crystal growing process for pulling a semiconductor ingot from a semiconductor material melt.</p> |
