ATMOSPHERIC PRESSURE PLASMA ETCHING REACTOR

摘要

An atmospheric pressure plasma etching reactor (10) has a table (11) holding a wafer (12) to be processed and which moves the wafer to be processed under at least one electrode (14) that is mounted in close proximity to the table (11) and defines an entry (18) of a gas mixture. With a radio-frequency voltage connected between the table (11) and the at least one electrode (14), a plasma is created between the at least one electrode (14) and the wafer (12) to be processed while the wafer (12) to be processed moves under the at least one electrode (14) by the table (11).