Semiconductor device comprising an EEPROM memory and a FLASH-EPROM memory, and method of manufacturing such a semiconductor device

摘要

A semiconductor device comprising an EEPROM and a FLASH-EPROM memory is described. The EEPROM memory comprises a matrix of memory cells (ME) with a selection transistor (T2) having a selection gate (3) and arranged in series with a memory transistor (T1) having a floating gate (1) and a control gate (2). The selection transistor is also connected to a bit line (BL) and the memory transistor is also connected to a common source line (SO) of the EEPROM memory. The FLASH-EPROM memory comprises a matrix of memory cells (MF) with a memory transistor (T3) having a floating gate (4) and a control gate (5). The memory cells of the FLASH-EPROM memory also comprise a transistor (T4) having a control gate (6) connected in series with the memory cell. The memory transistor is also connected to a bit line, and the transistor, which is connected in series with the memory transistor, is also connected to a common source line (SO) of the FLASH-EPROM memory. Similarly as the memory cells of the EEPROM memory, the memory cells of the FLASH-EPROM memory can be programmed by using Fowler-Nordheim tunneling. Consequently, the semiconductor device is suitable for use in low-voltage and low-power applications, i.e. the device can be used in contactless smart cards.