PROCESS FOR PRODUCING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

A gate electrode (7A) of a polymetal structure which comprises superposed layers of a WNX film and a tungsten film is formed over a polycrystalline silicon film, and then an oxidation treatment for regenerating a gate-insulating film (6) is conducted. During the oxidation treatment, the wafer (1) is heated or cooled under such conditions that the tungsten oxide (27) present on the side walls of the gate electrode (7A) is reduced. Thus, adhesion of tungsten oxide (27) to the surface of the wafer (1) is diminished.