| 摘要 |
<p>A resist releasing composition comprising a nitro group containing organic compound (A) and a resist releasing agent (B). The resist releasing composition can be used for removing with high efficiency a resist residue formed during wiring in a production process for an electronic circuit or the like for a semiconductor or a liquid crystal, while suppressing the corrosion of a silicon substrate and preventing effectively the corrosion of a-Si and p-Si which are constituent metals of a thin film transistor.</p> |
