| 发明名称 |
Ruthenium silicide wet etch |
| 摘要 |
A method of removing ruthenium silicide from a substrate surface which comprises exposing the ruthenium silicide surface to a solution containing chlorine and fluorine containing chemicals. In particular, said solution is designed to react with said ruthenium silicide film such that water-soluble reaction products are formed. |
| 申请公布号 |
AU2002245516(A1) |
申请公布日期 |
2002.09.19 |
| 申请号 |
AU20020245516 |
申请日期 |
2002.02.22 |
| 申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
BRENDA D. KRAUS;MICHAEL T. ANDREAS |
| 分类号 |
C23F1/30;A62C2/00;A62D1/00;B44C1/22;C09K13/00;C09K13/04;C09K13/08;H01L;H01L21/02;H01L21/28;H01L21/302;H01L21/306;H01L21/3205;H01L21/3213;H01L21/461;H01L21/8242;H01L23/52;H01L27/108;(IPC1-7):H01L21/321 |
主分类号 |
C23F1/30 |
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