发明名称 |
Method of deep trench formation with improved profile control and surface area |
摘要 |
A method for etching trenches includes providing a patterned mask stack on a substrate. A trench is etched in the substrate by forming a tapered-shaped trench portion of the trench, which narrows with depth in the substrate by employing a first plasma chemistry mixture including O2, HBr and NF3. An extended portion of the trench is formed by etching a second profile deeper and wider than the tapered-shaped trench portion in the substrate by employing a second plasma chemistry mixture including O2, HBr and SF6 or F2.
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申请公布号 |
US2002132422(A1) |
申请公布日期 |
2002.09.19 |
申请号 |
US20010805071 |
申请日期 |
2001.03.13 |
申请人 |
INFINEON TECHNOLOGIES NORTH AMERICA CORP. |
发明人 |
RANADE RAJIV;NAEEM MUNIR D.;MATHAD GANGADHARA S. |
分类号 |
H01L21/3065;H01L21/308;H01L21/8242;(IPC1-7):H01L21/824;H01L21/20 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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