发明名称 |
Method for fabricating III-V compound semiconductor |
摘要 |
A method for fabricating a III-V Group compound semiconductor comprising a step of epitaxially growing on an AlxGa1-xAs layer of lower Al content an AlxGa1-xAs layer of higher Al content, in which step a growth rate of the AlxGa1-xAs layer of higher Al content is made slower than a growth rate of the AlxGa1-xAs layer of lower Al content, thereby effectively inhibiting the occurrence of starting points of abnormal growth at the interface between the two layers.
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申请公布号 |
US2002132453(A1) |
申请公布日期 |
2002.09.19 |
申请号 |
US20020046741 |
申请日期 |
2002.01.17 |
申请人 |
ONO YOSHINOBU;HATA MASAHIKO |
发明人 |
ONO YOSHINOBU;HATA MASAHIKO |
分类号 |
C30B25/02;H01L21/20;H01L21/205;H01L33/12;H01L33/30;(IPC1-7):C30B1/00;H01L21/36 |
主分类号 |
C30B25/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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