| 摘要 |
Provided are level shift circuits S1-S4 to on/off-control a charge-transfer MOS transistor M1-M4 depending upon a clock pulse, and a branched charge pump circuit BC branched from an intermediate stage of a charge pump circuit to output a positive boost voltage. By using each-staged output V4, V5 of the branched charge pump circuit BC as a high-potential power to the level shift circuit S3, S4, the charge-transfer MOS transistors M1-M4 of the charge pump circuit when turning on are made in the gate-to-source voltages to nearly a constant value.
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