| 摘要 |
<p>A method for forming an integrated barrier layer structure that is compatible with copper (Cu) metallization schemes for integrated circuit fabrication is disclosed. In one aspect, an integrated circuit is metallized by forming an integrated barrier layer structure on a silicon substrate followed by deposition of one or more copper (Cu) layers. The integrated barrier layer structure includes one or more barrier layers selected from tantalum (Ta), tantalum nitride (TaNx), tungsten (W), and tungsten nitride (WNx) conformably deposited on the silicon substrate. After the one or more barrier layers are deposited on the silicon substrate, the silicon substrate is heated to form a silicide layer at the interface between the silicon substrate and the barrier layers.</p> |
