A parallel flat plate type plasma treatment device (1), wherein a baffle plate (28) is installed by fitting between the ceiling (2b) and the side wall (2a) of a chamber (2), whereby the baffle plate (28) encloses plasma in the upper part of the chamber (2) and forms a return route for return current to a high frequency power supply (27), and the return current flowing through the baffle plate (28) returns to the high frequency power supply (27) through the ceiling (2b) of the chamber (2).
申请公布号
WO02073676(A1)
申请公布日期
2002.09.19
申请号
WO2002JP02350
申请日期
2002.03.13
申请人
TOKYO ELECTRON LIMITED;AOKI, MAKOTO;YOSHITAKA, HIKARU;KATO, YOSHIHIRO;ASHIGAKI, SHIGEO;ABE, SYOICHI