发明名称 |
POSITIVE TYPE RESIST COMPOSITION |
摘要 |
PROBLEM TO BE SOLVED: To provide a positive type resist composition suitable for use in microphotofabrication using far ultraviolet light, particularly ArF excimer laser light and excellent in resolving power and margin for exposure. SOLUTION: The positive type resist composition contains (A) a resin having a specified alicyclic hydrocarbon group in a side chain and having a velocity of dissolution in an alkali developing solution increased by the action of an acid and (B) a specified compound which generates the acid when irradiated with active light or radiation. |
申请公布号 |
JP2002268223(A) |
申请公布日期 |
2002.09.18 |
申请号 |
JP20010068850 |
申请日期 |
2001.03.12 |
申请人 |
FUJI PHOTO FILM CO LTD |
发明人 |
SATO KENICHIRO;KODAMA KUNIHIKO |
分类号 |
G03F7/039;C08K5/00;C08L33/04;C08L101/02;H01L21/027 |
主分类号 |
G03F7/039 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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