发明名称 POSITIVE TYPE RESIST COMPOSITION
摘要 PROBLEM TO BE SOLVED: To provide a positive type resist composition suitable for use in microphotofabrication using far ultraviolet light, particularly ArF excimer laser light and excellent in resolving power and margin for exposure. SOLUTION: The positive type resist composition contains (A) a resin having a specified alicyclic hydrocarbon group in a side chain and having a velocity of dissolution in an alkali developing solution increased by the action of an acid and (B) a specified compound which generates the acid when irradiated with active light or radiation.
申请公布号 JP2002268223(A) 申请公布日期 2002.09.18
申请号 JP20010068850 申请日期 2001.03.12
申请人 FUJI PHOTO FILM CO LTD 发明人 SATO KENICHIRO;KODAMA KUNIHIKO
分类号 G03F7/039;C08K5/00;C08L33/04;C08L101/02;H01L21/027 主分类号 G03F7/039
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