| 发明名称 |
SOI substrate, annealing method therefor, semiconductor device having the SOI substrate, and method of manufacturing the same |
| 摘要 |
<p>This invention relates to a method of manufacturing an SOI wafer having a low HF defect density using annealing in a reducing atmosphere. An SOI substrate is annealed in a reducing atmosphere at a temperature lower than the melting point of single-crystal silicon. To prevent any HF defects, a holding tool having a surface formed from silicon is used as a holding tool for holding the SOI substrate. <IMAGE></p> |
| 申请公布号 |
EP1241707(A2) |
申请公布日期 |
2002.09.18 |
| 申请号 |
EP20020005550 |
申请日期 |
2002.03.11 |
| 申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
ITO, MASATAKA |
| 分类号 |
H01L21/336;H01L21/28;H01L21/324;H01L21/762;H01L27/12;H01L29/786;(IPC1-7):H01L21/762 |
主分类号 |
H01L21/336 |
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