SEMICONDUCTOR DEVICE HAVING SILICON-ON-INSULATOR STRUCTURE AND METHOD FOR FABRICATING THE SAME

摘要

PURPOSE: A semiconductor device having a silicon-on-insulator structure and a method for fabricating the device are provided to allow applying a fixed voltage to an isolated body region while attaining high integration density. CONSTITUTION: The device has an insulating layer and an isolated silicon region of the first conductivity type formed on the insulating layer. A source area(130) and a drain area(140) are formed of the second conductivity type at both ends of the silicon region. The isolated body area for a channel thereon is disposed between the source area(130) and the drain area(140). A body contact area(160) of the first conductivity type is in contact with both the source area(130) and the body area. A conductive layer is formed on both surfaces of the source area(130) and the body contact area(160). A source electrode is in contact with a source contact(130c) of the conductive layer on the source area(130). Since the body contact area(160) is connected to the source electrode through the conductive layer, an additional contact area is not required within the body contact area(160) and thereby integration density of the device is improved.