发明名称 TFT SUBSTRATE AND FABRICATION METHOD THEREOF
摘要 PURPOSE: A TFT(Thin Film Transistor) substrate and a method for fabricating the same are provided to remain photosensitive film pattern used in the procedure of forming data wires on the data wires for preventing the etching of the data wires by the etching gas used in the following etching procedure. CONSTITUTION: A TFT substrate includes an insulating substrate(10), gate wires formed on the substrate and including gate lines and gate electrodes, a gate insulating film covering the gate wires, a semiconductor pattern(42) formed on the gate insulating film, data wires formed on the gate insulating film and including data lines, source electrodes and drain electrodes(66), a photosensitive film pattern(PR) formed on the data wires, a protection film(70) covering the photosensitive film pattern and the semiconductor pattern, first contact holes(72) formed on the photosensitive film pattern on the protection film and the drain electrodes for exposing the drain electrodes, and pixel electrodes contacting the drain electrodes via the first contact holes.
申请公布号 KR20020072649(A) 申请公布日期 2002.09.18
申请号 KR20010012593 申请日期 2001.03.12
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 HUH, SEONG UK;PARK, YEONG BAE
分类号 G02F1/136;(IPC1-7):G02F1/136 主分类号 G02F1/136
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